APTGT100DA120TG APTGT100DA120TG ? rev 1 july, 2006 www.microsemi.com 1 - 5 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. see application note apt0502 on www.microsemi.com cr1 vbus sense nt c2 q2 g2 nt c1 out vbus e2 0/vbus vbus out out ntc2 ntc1 0/vbus e2 e2 g2 g2 vbus sense s ymbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 140 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1100v v ces = 1200v i c = 100a @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? fast trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant boost chopper fast trench + field stop igbt ? powe r modul e
APTGT100DA120TG APTGT100DA120TG ? rev 1 july, 2006 www.microsemi.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 7200 c oes output capacitance 400 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 300 pf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 90 ns e on turn on energy t j = 125c 10 e off turn off energy v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? t j = 125c 10 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 100a v ge = 0v t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 9 q rr reverse recovery charge t j = 125c 18 c t j = 25c 5 e r reverse recovery energy i f = 100a v r = 600v di/dt =2000a/s t j = 125c 9 mj
APTGT100DA120TG APTGT100DA120TG ? rev 1 july, 2006 www.microsemi.com 3 - 5 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.26 r thjc junction to case thermal resistance diode 0.48 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g sp4 package outline (dimensions in mm) al l d imensio ns marked " * " are t ol erenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT100DA120TG APTGT100DA120TG ? rev 1 july, 2006 www.microsemi.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =2 5c t j =125c 0 50 100 150 200 01234 v ce (v ) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 01234 v ce (v ) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.9 ? t j = 125c eon eoff er 0 5 10 15 20 25 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 200 240 0 300 600 900 1200 1500 v ce (v ) i c (a) v ge =15v t j =125c r g =3.9 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT100DA120TG APTGT100DA120TG ? rev 1 july, 2006 www.microsemi.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zv s 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =600v d= 50% r g =3.9 ? t j =125c tc= 75c operating frequency vs collector curren t maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode m icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in microsemi's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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